beam system Search Results


5x beam condenser perkin elmer  (Revvity)
90
Revvity 5x beam condenser perkin elmer
5x Beam Condenser Perkin Elmer, supplied by Revvity, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/5x beam condenser perkin elmer/product/Revvity
Average 90 stars, based on 1 article reviews
5x beam condenser perkin elmer - by Bioz Stars, 2026-04
90/100 stars
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ebl  (Deben UK Ltd)
93
Deben UK Ltd ebl
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Ebl, supplied by Deben UK Ltd, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/ebl/product/Deben UK Ltd
Average 93 stars, based on 1 article reviews
ebl - by Bioz Stars, 2026-04
93/100 stars
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genix microfocus x ray source  (Xenocs Inc)
97
Xenocs Inc genix microfocus x ray source
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Genix Microfocus X Ray Source, supplied by Xenocs Inc, used in various techniques. Bioz Stars score: 97/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/genix microfocus x ray source/product/Xenocs Inc
Average 97 stars, based on 1 article reviews
genix microfocus x ray source - by Bioz Stars, 2026-04
97/100 stars
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coherent beam combiners  (Coherent Corp)
93
Coherent Corp coherent beam combiners
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Coherent Beam Combiners, supplied by Coherent Corp, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/coherent beam combiners/product/Coherent Corp
Average 93 stars, based on 1 article reviews
coherent beam combiners - by Bioz Stars, 2026-04
93/100 stars
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coherent comoving galaxy velocities  (Coherent Corp)
95
Coherent Corp coherent comoving galaxy velocities
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Coherent Comoving Galaxy Velocities, supplied by Coherent Corp, used in various techniques. Bioz Stars score: 95/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/coherent comoving galaxy velocities/product/Coherent Corp
Average 95 stars, based on 1 article reviews
coherent comoving galaxy velocities - by Bioz Stars, 2026-04
95/100 stars
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cpp boxes  (AutoMate Scientific Inc)
96
AutoMate Scientific Inc cpp boxes
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Cpp Boxes, supplied by AutoMate Scientific Inc, used in various techniques. Bioz Stars score: 96/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/cpp boxes/product/AutoMate Scientific Inc
Average 96 stars, based on 1 article reviews
cpp boxes - by Bioz Stars, 2026-04
96/100 stars
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lambda 721 optical beam combiner  (Sutter Instrument Company)
94
Sutter Instrument Company lambda 721 optical beam combiner
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Lambda 721 Optical Beam Combiner, supplied by Sutter Instrument Company, used in various techniques. Bioz Stars score: 94/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/lambda 721 optical beam combiner/product/Sutter Instrument Company
Average 94 stars, based on 1 article reviews
lambda 721 optical beam combiner - by Bioz Stars, 2026-04
94/100 stars
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colorimeter 4wave cr30 16  (Denton Vacuum)
90
Denton Vacuum colorimeter 4wave cr30 16
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Colorimeter 4wave Cr30 16, supplied by Denton Vacuum, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/colorimeter 4wave cr30 16/product/Denton Vacuum
Average 90 stars, based on 1 article reviews
colorimeter 4wave cr30 16 - by Bioz Stars, 2026-04
90/100 stars
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k2 summit direct electron  (Gatan Inc)
96
Gatan Inc k2 summit direct electron
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
K2 Summit Direct Electron, supplied by Gatan Inc, used in various techniques. Bioz Stars score: 96/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/k2 summit direct electron/product/Gatan Inc
Average 96 stars, based on 1 article reviews
k2 summit direct electron - by Bioz Stars, 2026-04
96/100 stars
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ar ion milling  (Gatan Inc)
96
Gatan Inc ar ion milling
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Ar Ion Milling, supplied by Gatan Inc, used in various techniques. Bioz Stars score: 96/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/ar ion milling/product/Gatan Inc
Average 96 stars, based on 1 article reviews
ar ion milling - by Bioz Stars, 2026-04
96/100 stars
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legtosem prototype instrument  (Technoorg Linda Co Ltd)
93
Technoorg Linda Co Ltd legtosem prototype instrument
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Legtosem Prototype Instrument, supplied by Technoorg Linda Co Ltd, used in various techniques. Bioz Stars score: 93/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/legtosem prototype instrument/product/Technoorg Linda Co Ltd
Average 93 stars, based on 1 article reviews
legtosem prototype instrument - by Bioz Stars, 2026-04
93/100 stars
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argon ion beam  (Gatan Inc)
94
Gatan Inc argon ion beam
Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically <t>thin</t> <t>MoSe2</t> film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, <t>EBL</t> was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.
Argon Ion Beam, supplied by Gatan Inc, used in various techniques. Bioz Stars score: 94/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/result/argon ion beam/product/Gatan Inc
Average 94 stars, based on 1 article reviews
argon ion beam - by Bioz Stars, 2026-04
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Image Search Results


Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically thin MoSe2 film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, EBL was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.

Journal: Nanoscale

Article Title: Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition.

doi: 10.1039/c4nr03817g

Figure Lengend Snippet: Fig. 1 illustrates schematically the process of patterning with SU- 8, whose procedure is described in details in the experimental section. Briefly, after the synthesis of large area and atomically thin MoSe2 film with CVD on SiO2/Si substrate, SU-8 solution was spincoated and soft-baked on top of the sample. As SU-8 is a 50 negative resist, EBL was used to expose the area of SU-8 layer in a certain shape and size that will remain on the sample after the resist development step. Finally, the developed SU-8 structure carries along the MoSe2 layer beneath it upon the removal of the SU-8 layer in Remover PG solvent. Thus, the MoSe2 film is 55 removed in an area whose shape corresponds to the exposed SU-8 area during the EBL process.

Article Snippet: 17 MoSe2 devices fabrication and patterning were performed with EBL (JEOL JSM7001F equipped with Deben beam blanker and Nanometer Pattern Generation System) at 30 kV acceleration voltage.

Techniques: Solvent